The Infineon silicon carbide MOSFET reduction of system complexity. It directly drive from fly-back controller. Efficiency improvement and cooling effort reduction. Enabling higher frequency.
Very low switching losses
Short circuit withstand time 3 μs
Fully controllable dV/dt
Benchmark gate threshold voltage, VGS(th) = 4.5V
Robust against parasitic turn on, 0V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
Package creepage and clearance distance > 6.1mm
Sense pin for optimized switching performance
Short circuit withstand time 3 μs
Fully controllable dV/dt
Benchmark gate threshold voltage, VGS(th) = 4.5V
Robust against parasitic turn on, 0V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
Package creepage and clearance distance > 6.1mm
Sense pin for optimized switching performance
N-Channel MOSFET, 18 A, 1200 V, 7-Pin D2PAK IMBG120R220M1HXTMA1
Manufacturer:
Infineon
Manufacturer Part No:
IMBG120R220M1HXTMA1
Enrgtech Part No:
ET24143480
Warranty:
Manufacturer
£ 4.51
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
18 A
Maximum Drain Source Voltage:
1200 V
Package Type:
TO-263-7
Mounting Type:
Surface Mount
Pin Count:
7
Number of Elements per Chip:
1
