The Infineon HEXFET series 55V N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering technique.
Ultra Low On-Resistance
Fast Switching
Lead free
Fast Switching
Lead free
N-Channel MOSFET, 27 A, 55 V, 3-Pin DPAK IRFR4105TRPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRFR4105TRPBF
Enrgtech Part No:
ET21617629
Warranty:
Manufacturer
£ 0.16
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Channel Type:
N
Maximum Continuous Drain Current:
27 A
Maximum Drain Source Voltage:
55 V
Series:
HEXFET
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.045 Ω
Maximum Gate Threshold Voltage:
4V
Transistor Material:
Si
Number of Elements per Chip:
1
