Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 NTJD4152PT1G

Channel Type:

P

Maximum Continuous Drain Current:

880 mA

Maximum Drain Source Voltage:

20 V

Package Type:

SOT-363

Mounting Type:

Surface Mount

Pin Count:

6

Maximum Drain Source Resistance:

1 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

350 mW

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-12 V, +12 V

Length:

2.2mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Width:

1.35mm

Number of Elements per Chip:

2

Typical Gate Charge @ Vgs:

2.2 nC @ 4.5 V

Height:

1mm

Minimum Operating Temperature:

-55 °C