N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF

Channel Type:

N

Maximum Continuous Drain Current:

600 mA

Maximum Drain Source Voltage:

200 V

Package Type:

HVMDIP

Mounting Type:

Through Hole

Pin Count:

4

Maximum Drain Source Resistance:

1.5 Ω

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

1 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Length:

5mm

Width:

6.29mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

8.2 nC @ 10 V

Height:

3.37mm

Minimum Operating Temperature:

-55 °C