P-Channel MOSFET, 20 A, 60 V, 8-Pin WDFN NTTFS5116PLTAG

Channel Type:

P

Maximum Continuous Drain Current:

20 A

Maximum Drain Source Voltage:

60 V

Package Type:

WDFN

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

72 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

40 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

14 nC @ 4.5 V, 25 nC @ 10 V

Length:

3.15mm

Width:

3.15mm

Transistor Material:

Si

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

0.75mm