20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 69 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 69 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
P-Channel MOSFET, 2.9 A, 20 V, 4-Pin DFN1010D-3 PMXB75UPEZ
Manufacturer:
Nexperia
Manufacturer Part No:
PMXB75UPEZ
Enrgtech Part No:
ET16800574
Warranty:
Manufacturer
£ 0.06
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Channel Type:
P
Maximum Continuous Drain Current:
2.9 A
Maximum Drain Source Voltage:
20 V
Package Type:
DFN1010D-3
Mounting Type:
Surface Mount
Pin Count:
4
Maximum Drain Source Resistance:
950 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
-1V
Minimum Gate Threshold Voltage:
-0.4V
Maximum Power Dissipation:
8330 mW
Transistor Configuration:
Single
