Infineon OptiMOS P P-Channel MOSFET, 1.18 A, 20 V, 3-Pin SOT-23 BSS215PH6327XTSA1

Infineon OptiMOS P P-Channel MOSFET, 1.18 A, 20 V, 3-Pin SOT-23 BSS215PH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSS215PH6327XTSA1
Enrgtech Part No:
ET16792581
Warranty:
Manufacturer
£ 0.1400
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Channel Type:
P
Maximum Continuous Drain Current:
1.18 A
Maximum Drain Source Voltage:
20 V
Package Type:
SOT-23
Series:
OptiMOS P
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
280 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
0.6V
Minimum Gate Threshold Voltage:
1.2V
Maximum Power Dissipation:
500 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-12 V, +12 V
Typical Gate Charge @ Vgs:
3.6 nC @ 4.5 V
Transistor Material:
Si
Width:
1.3mm
Maximum Operating Temperature:
+150 °C
Length:
2.9mm
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Height:
1mm
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0900766b8132f05a.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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