The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Silicon N-Channel MOSFET, 16 A, 110 V, 3-Pin DPAK IRFR3910TRLPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRFR3910TRLPBF
Enrgtech Part No:
ET21632845
Warranty:
Manufacturer
£ 0.30
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Channel Type:
N
Maximum Continuous Drain Current:
16 A
Maximum Drain Source Voltage:
110 V
Package Type:
DPAK (TO-252)
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.000115 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Transistor Material:
Silicon
