P-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK SQD19P06-60L_GE3

Channel Type:

P

Maximum Continuous Drain Current:

11 A

Maximum Drain Source Voltage:

60 V

Series:

SQ Rugged

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

125 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1.5V

Maximum Power Dissipation:

46 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

27 nC @ 10 V

Length:

6.73mm

Maximum Operating Temperature:

+175 °C

Transistor Material:

Si

Number of Elements per Chip:

1

Width:

6.22mm

Minimum Operating Temperature:

-55 °C

Height:

2.38mm