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sia112ldj-t1-ge3 Silicon N-Channel MOSFET, 8.8 A, 100 V, 7-Pin SC-70-6L Vishay SIA112LDJ-T1-GE3
sia112ldj-t1-ge3 Silicon N-Channel MOSFET, 8.8 A, 100 V, 7-Pin SC-70-6L Vishay SIA112LDJ-T1-GE3
sia112ldj-t1-ge3 Silicon N-Channel MOSFET, 8.8 A, 100 V, 7-Pin SC-70-6L Vishay SIA112LDJ-T1-GE3
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon. TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Vishay

Silicon N-Channel MOSFET, 8.8 A, 100 V, 7-Pin SC-70-6L SIA112LDJ-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIA112LDJ-T1-GE3
Enrgtech Part No:
ET24597574
Warranty:
Manufacturer
£ 0.21

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Channel Type:

N

Maximum Continuous Drain Current:

8.8 A

Maximum Drain Source Voltage:

100 V

Package Type:

SC-70-6L

Mounting Type:

Surface Mount

Pin Count:

7

Channel Mode:

Enhancement

Number of Elements per Chip:

1

Transistor Material:

Silicon

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