N-Channel MOSFET, 11.1 A, 650 V, 3-Pin TO-220SIS TK11A65W,S5X(M

Channel Type:

N

Maximum Continuous Drain Current:

11.1 A

Maximum Drain Source Voltage:

650 V

Series:

TK

Package Type:

TO-220SIS

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

390 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Maximum Power Dissipation:

35 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Width:

4.5mm

Maximum Operating Temperature:

+150 °C

Length:

10mm

Typical Gate Charge @ Vgs:

25 nC @ 10 V

Number of Elements per Chip:

1

Transistor Material:

Si

Forward Diode Voltage:

1.7V

Height:

15mm