N-Channel MOSFET, 171 A, 30 V, 3-Pin TO-220AB IRLB8314PBF

Channel Type:

N

Maximum Continuous Drain Current:

171 A

Maximum Drain Source Voltage:

30 V

Package Type:

TO-220AB

Series:

HEXFET

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

3.2 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.2V

Minimum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

125 W

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

40 nC @ 4.5 V

Length:

10.67mm

Width:

4.83mm

Height:

16.51mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1V