


N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF
Manufacturer:
Infineon
Manufacturer Part No:
IRFP1405PBF
Enrgtech Part No:
ET13874906
Warranty:
Manufacturer
£ 1.75
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Channel Type:
N
Maximum Continuous Drain Current:
160 A
Maximum Drain Source Voltage:
55 V
Package Type:
TO-247
Series:
HEXFET
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
5.3 mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation:
310 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V