PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
P-Channel MOSFET, 11 A, 20 V, 8-Pin SOIC FDS6576
Manufacturer:
onsemi
Manufacturer Part No:
FDS6576
Enrgtech Part No:
ET14519820
Warranty:
Manufacturer
£ 0.32
Checking for live stock
Channel Type:
P
Maximum Continuous Drain Current:
11 A
Maximum Drain Source Voltage:
20 V
Package Type:
SOIC
Series:
PowerTrench
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
14 mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-12 V, +12 V
