The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The fast recovery diode featuring very low recovery charge, time and RDS on makes this fast switching super junction power MOSFET tailored for the most demanding high efficiency bridge topologies and ZVS phase shift converters.
Fast recovery body diode
Worldwide best RDS on per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested
Extremely dv/dt ruggedness
Worldwide best RDS on per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested
Extremely dv/dt ruggedness
N-Channel MOSFET, 56 A, 600 V, 3-Pin TO-220 STP60N043DM9
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STP60N043DM9
Enrgtech Part No:
ET23425655
Warranty:
Manufacturer
£ 5.15
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Channel Type:
N
Maximum Continuous Drain Current:
56 A
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220
Mounting Type:
Through Hole
Pin Count:
3
