P-Channel MOSFET, 360 mA, 100 V, 3-Pin SC-59 BSR316PH6327XTSA1

Channel Type:

P

Maximum Continuous Drain Current:

360 mA

Maximum Drain Source Voltage:

100 V

Package Type:

SC-59

Series:

SIPMOS®

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

2.2 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

500 mW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

20 V

Number of Elements per Chip:

1

Width:

1.6mm

Typical Gate Charge @ Vgs:

5.3 nC @ 10 V

Maximum Operating Temperature:

+150 °C

Length:

3mm

Forward Diode Voltage:

1.1V

Automotive Standard:

AEC-Q101

Height:

1.1mm

Minimum Operating Temperature:

-55 °C