Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET SI5935CDC-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

3.8 A

Maximum Drain Source Voltage:

20 V

Package Type:

1206 ChipFET

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

156 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

0.4V

Maximum Power Dissipation:

3.1 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-8 V, +8 V

Typical Gate Charge @ Vgs:

7 nC @ 5 V

Length:

3.1mm

Maximum Operating Temperature:

+150 °C

Transistor Material:

Si

Number of Elements per Chip:

2

Width:

1.7mm

Minimum Operating Temperature:

-55 °C

Height:

1.1mm