Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 C3M0065100K
Manufacturer:
Wolfspeed
Manufacturer Part No:
C3M0065100K
Enrgtech Part No:
ET11604884
Warranty:
Manufacturer
£ 10.55
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
35 A
Maximum Drain Source Voltage:
1000 V
Package Type:
TO-247-4
Series:
C3M
Mounting Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance:
90 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.5V
Minimum Gate Threshold Voltage:
1.8V
Maximum Power Dissipation:
113.5 W
