P-Channel MOSFET, 4.4 A, 40 V, 3-Pin SOT-23 SI2319CDS-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

4.4 A

Maximum Drain Source Voltage:

40 V

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

108 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

2.5 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+150 °C

Length:

3.04mm

Typical Gate Charge @ Vgs:

13.6 nC @ 10 V

Width:

1.4mm

Transistor Material:

Si

Number of Elements per Chip:

1

Height:

1.02mm

Minimum Operating Temperature:

-55 °C