P-Channel MOSFET, 700 mA, 100 V, 4-Pin HVMDIP IRFD9110PBF

Channel Type:

P

Maximum Continuous Drain Current:

700 mA

Maximum Drain Source Voltage:

100 V

Package Type:

HVMDIP

Mounting Type:

Through Hole

Pin Count:

4

Maximum Drain Source Resistance:

1.2 Ω

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

1.3 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Length:

5mm

Typical Gate Charge @ Vgs:

8.7 nC @ 10 V

Transistor Material:

Si

Width:

6.29mm

Minimum Operating Temperature:

-55 °C

Height:

3.37mm