P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

9.9 A

Maximum Drain Source Voltage:

30 V

Package Type:

PowerPAK ChipFET

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

33 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

31 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

1.98mm

Length:

3.08mm

Typical Gate Charge @ Vgs:

30 nC @ 10 V

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

0.85mm