The Infineon CoolSiC™ 1200 V, 60 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
Benchmark high threshold voltage, Vth > 4 V
0V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
N-Channel MOSFET, 36 A, 1200 V, 3-Pin TO-247 IMW120R060M1HXKSA1
Manufacturer:
Infineon
Manufacturer Part No:
IMW120R060M1HXKSA1
Enrgtech Part No:
ET21632895
Warranty:
Manufacturer
£ 3.36
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
36 A
Maximum Drain Source Voltage:
1200 V
Package Type:
TO-247
Series:
IMW1
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
60 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Transistor Material:
Si
Number of Elements per Chip:
1
