N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. All features

Worldwide best FOM RDS(on)*Qg among silicon-based devices

Higher VDSS rating

Higher dv/dt capability

Excellent switching performance

Easy to drive

100% avalanche tested

Zener-protected