N-Channel MOSFET, 85 A, 55 V, 3-Pin D2PAK IRF1010NSTRLPBF

Channel Type:

N

Maximum Continuous Drain Current:

85 A

Maximum Drain Source Voltage:

55 V

Package Type:

D2PAK (TO-263)

Series:

HEXFET

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

11 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

180 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Length:

10.67mm

Typical Gate Charge @ Vgs:

120 nC @ 10 V

Width:

11.3mm

Transistor Material:

Si

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Forward Diode Voltage:

1.3V

Minimum Operating Temperature:

-55 °C

Height:

4.83mm