N-Channel MOSFET, 9.4 A, 100 V, 3-Pin IPAK IRFU120NPBF

Channel Type:

N

Maximum Continuous Drain Current:

9.4 A

Maximum Drain Source Voltage:

100 V

Package Type:

IPAK (TO-251)

Series:

HEXFET

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

210 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

48 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

2.3mm

Transistor Material:

Si

Typical Gate Charge @ Vgs:

25 nC @ 10 V

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Length:

6.6mm

Minimum Operating Temperature:

-55 °C

Height:

6.1mm