The Infineon OptiMOS power MOSFET IPTG111N20NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 3 - 200 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.
High efficiency and lower EMI
High performance capability
High performance capability
N-Channel MOSFET, 108 A, 200 V, 8-Pin PG HSOG-8 (TOLG) IPTG111N20NM3FDATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPTG111N20NM3FDATMA1
Enrgtech Part No:
ET22536315
Warranty:
Manufacturer
£ 2.32
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Channel Type:
N
Maximum Continuous Drain Current:
108 A
Maximum Drain Source Voltage:
200 V
Series:
OptiMOS™ 3
Package Type:
PG HSOG-8 (TOLG)
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
0.0111 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
