N-Channel MOSFET, 600 mA, 200 V, 6-Pin TSOP-6 IRF5801TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

600 mA

Maximum Drain Source Voltage:

200 V

Package Type:

TSOP-6

Series:

HEXFET

Mounting Type:

Surface Mount

Pin Count:

6

Maximum Drain Source Resistance:

2.2 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

5.5V

Minimum Gate Threshold Voltage:

3V

Maximum Power Dissipation:

2 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Transistor Material:

Si

Length:

3mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

3.9 nC @ 10 V

Width:

1.5mm

Minimum Operating Temperature:

-55 °C

Height:

0.9mm