N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 SIRA14DP-T1-GE3

Channel Type:

N

Maximum Continuous Drain Current:

58 A

Maximum Drain Source Voltage:

30 V

Series:

TrenchFET

Package Type:

PowerPAK SO-8

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

8.5 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1.1V

Maximum Power Dissipation:

31.2 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +20 V

Typical Gate Charge @ Vgs:

19.4 nC @ 10 V

Length:

6.25mm

Maximum Operating Temperature:

+150 °C

Width:

5.26mm

Transistor Material:

Si

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

1.12mm