This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche
It is lead-free
N-Channel MOSFET, 180 A, 40 V, 3-Pin D2PAK IRF1404ZSTRLPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRF1404ZSTRLPBF
Enrgtech Part No:
ET21605543
Warranty:
Manufacturer
£ 0.64
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Channel Type:
N
Maximum Continuous Drain Current:
180 A
Maximum Drain Source Voltage:
40 V
Package Type:
D2PAK (TO-263)
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.0037 Ω
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
