N-Channel MOSFET, 10 A, 100 V, 8-Pin PQFN 5 x 6 IRFH5210TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

10 A

Maximum Drain Source Voltage:

100 V

Series:

HEXFET

Package Type:

PQFN 5 x 6

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

14.9 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

104 W

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

40 nC @ 10 V

Length:

5mm

Maximum Operating Temperature:

+150 °C

Width:

6mm

Height:

0.9mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.3V