N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRLD120PBF

Channel Type:

N

Maximum Continuous Drain Current:

1.3 A

Maximum Drain Source Voltage:

100 V

Package Type:

HVMDIP

Mounting Type:

Through Hole

Pin Count:

4

Maximum Drain Source Resistance:

270 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

1.3 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-10 V, +10 V

Length:

5mm

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Transistor Material:

Si

Typical Gate Charge @ Vgs:

12 nC @ 5 V

Width:

6.29mm

Height:

3.37mm

Minimum Operating Temperature:

-55 °C