The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems.
Advanced Process Technology
Logic Level
High Power Density
Logic Level
High Power Density
N-Channel MOSFET, 112 A, 40 V DirectFET ISOMETRIC AUIRL7736M2TR
Manufacturer:
Infineon
Manufacturer Part No:
AUIRL7736M2TR
Enrgtech Part No:
ET21606503
Warranty:
Manufacturer
£ 1.03
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
112 A
Maximum Drain Source Voltage:
40 V
Package Type:
DirectFET ISOMETRIC
Series:
HEXFET
Mounting Type:
Surface Mount
Maximum Drain Source Resistance:
0.003 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.5V
Transistor Material:
Si
Number of Elements per Chip:
1
