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ipd70r1k4p7sauma1 N-Channel MOSFET, 4 A, 700 V, 3-Pin DPAK Infineon IPD70R1K4P7SAUMA1
ipd70r1k4p7sauma1 N-Channel MOSFET, 4 A, 700 V, 3-Pin DPAK Infineon IPD70R1K4P7SAUMA1
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs. It has Excellent thermal behaviour
Integrated ESD protection diode
Infineon

N-Channel MOSFET, 4 A, 700 V, 3-Pin DPAK IPD70R1K4P7SAUMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD70R1K4P7SAUMA1
Enrgtech Part No:
ET21606541
Warranty:
Manufacturer
£ 0.12

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Channel Type:

N

Maximum Continuous Drain Current:

4 A

Maximum Drain Source Voltage:

700 V

Series:

CoolMOS™ P7

Package Type:

TO-252

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

1.4 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Number of Elements per Chip:

1

Transistor Material:

Si

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