P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P4L04ATMA1

Channel Type:

P

Maximum Continuous Drain Current:

80 A

Maximum Drain Source Voltage:

40 V

Series:

OptiMOS P

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

7.1 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.2V

Minimum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

125 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +16 V

Typical Gate Charge @ Vgs:

135 nC @ 10 V

Length:

10mm

Maximum Operating Temperature:

+175 °C

Width:

9.25mm

Transistor Material:

Si

Number of Elements per Chip:

1

Minimum Operating Temperature:

-55 °C

Height:

4.4mm