

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 FDV303N
Manufacturer:
onsemi
Manufacturer Part No:
FDV303N
Enrgtech Part No:
ET14520030
Warranty:
Manufacturer
£ 0.09
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Channel Type:
N
Maximum Continuous Drain Current:
680 mA
Maximum Drain Source Voltage:
25 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
450 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
0.65V
Maximum Power Dissipation:
350 mW
Transistor Configuration:
Single
Maximum Gate Source Voltage:
+8 V