N-Channel MOSFET, 30 A, 55 V, 3-Pin D2PAK IRLZ34NSTRLPBF

Channel Type:

N

Maximum Continuous Drain Current:

30 A

Maximum Drain Source Voltage:

55 V

Series:

HEXFET

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

60 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

68 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-16 V, +16 V

Width:

11.3mm

Typical Gate Charge @ Vgs:

25 nC @ 5 V

Maximum Operating Temperature:

+175 °C

Length:

10.67mm

Transistor Material:

Si

Number of Elements per Chip:

1

Forward Diode Voltage:

1.3V

Minimum Operating Temperature:

-55 °C

Height:

4.83mm