P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 SI2309CDS-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

1.2 A

Maximum Drain Source Voltage:

60 V

Package Type:

SOT-23

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

345 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

1 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

2.7 nC @ 4.5 V

Length:

3.04mm

Transistor Material:

Si

Width:

1.4mm

Number of Elements per Chip:

1

Maximum Operating Temperature:

+150 °C

Minimum Operating Temperature:

-55 °C

Height:

1.02mm