


QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

P-Channel MOSFET, 19 A, 60 V, 3-Pin TO-220 FQPF27P06
Manufacturer:
onsemi
Manufacturer Part No:
FQPF27P06
Enrgtech Part No:
ET14523056
Warranty:
Manufacturer
£ 1.31
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Channel Type:
P
Maximum Continuous Drain Current:
19 A
Maximum Drain Source Voltage:
60 V
Series:
QFET
Package Type:
TO-220
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
70 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
120 W
Transistor Configuration:
Single