QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
N-Channel MOSFET, 1.7 A, 100 V, 3-Pin SOT-223 FQT7N10LTF
Manufacturer:
onsemi
Manufacturer Part No:
FQT7N10LTF
Enrgtech Part No:
ET14523206
Warranty:
Manufacturer
£ 0.22
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Channel Type:
N
Maximum Continuous Drain Current:
1.7 A
Maximum Drain Source Voltage:
100 V
Package Type:
SOT-223
Series:
QFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
350 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
2 W
Transistor Configuration:
Single
