N-Channel MOSFET, 65 A, 200 V, 3-Pin D2PAK SUM65N20-30-E3

Channel Type:

N

Maximum Continuous Drain Current:

65 A

Maximum Drain Source Voltage:

200 V

Package Type:

D2PAK (TO-263)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

84 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

375 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Width:

9.652mm

Typical Gate Charge @ Vgs:

90 nC @ 10 V

Length:

10.41mm

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Height:

4.826mm

Minimum Operating Temperature:

-55 °C