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iqe030n06nm5cgscatma1 SiC N-Channel MOSFET, 132 A, 60 V, 9-Pin PG-WHTFN-9 Infineon IQE030N06NM5CGSCATMA1
iqe030n06nm5cgscatma1 SiC N-Channel MOSFET, 132 A, 60 V, 9-Pin PG-WHTFN-9 Infineon IQE030N06NM5CGSCATMA1
The Infineon MOSFET is a power transistor exemplifies cutting edge technology and performance, designed for efficient operation in demanding applications. Optimised for synchronous rectification, it assures superior thermal management and reliability, making it an ideal choice for various industrial uses. Built around the OptiMOS 5 platform, it is tailored to operate effectively within a 60V range while maintaining a compact footprint. Its robust design facilitates efficient switching, ensuring high performance while minimising losses. Superior thermal resistance for reliability
Pb free plating for environmental compliance
100% avalanche testing for performance assurance
Exceptional gate charge for switching efficiency
Complies with halogen free standards
Ideal for rigorous industrial applications
Infineon

SiC N-Channel MOSFET, 132 A, 60 V, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IQE030N06NM5CGSCATMA1
Enrgtech Part No:
ET28373674
Warranty:
Manufacturer
£ 1.86

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Channel Type:

N

Maximum Continuous Drain Current:

132 A

Maximum Drain Source Voltage:

60 V

Package Type:

PG-WHTFN-9

Series:

OptiMOS

Mounting Type:

Surface Mount

Pin Count:

9

Channel Mode:

Enhancement

Number of Elements per Chip:

1

Transistor Material:

SiC

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