Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC SI4909DY-T1-GE3

Channel Type:

P

Maximum Continuous Drain Current:

6.5 A

Maximum Drain Source Voltage:

40 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

34 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

3.2 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

41.5 nC @ 10 V

Number of Elements per Chip:

2

Maximum Operating Temperature:

+150 °C

Transistor Material:

Si

Length:

5mm

Width:

4mm

Minimum Operating Temperature:

-55 °C

Height:

1.55mm