N-Channel MOSFET, 82 A, 80 V, 4-Pin LFPAK, SOT-669 PSMN8R2-80YS,115

Channel Type:

N

Maximum Continuous Drain Current:

82 A

Maximum Drain Source Voltage:

80 V

Package Type:

LFPAK, SOT-669

Mounting Type:

Surface Mount

Pin Count:

4

Maximum Drain Source Resistance:

13.4 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

130 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Length:

5mm

Typical Gate Charge @ Vgs:

55 nC @ 10 V

Width:

4.1mm

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

1.1mm