P-Channel MOSFET, 190 mA, 250 V, 3-Pin SOT-89 BSS192PH6327FTSA1

Channel Type:

P

Maximum Continuous Drain Current:

190 mA

Maximum Drain Source Voltage:

250 V

Series:

SIPMOS®

Package Type:

SOT-89

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

20 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

1 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

2.5mm

Maximum Operating Temperature:

+150 °C

Length:

4.5mm

Number of Elements per Chip:

1

Transistor Material:

Si

Typical Gate Charge @ Vgs:

4.9 nC @ 10 V

Height:

1.5mm

Minimum Operating Temperature:

-55 °C