N-Channel MOSFET, 80 A, 55 V, 3-Pin DPAK STD65N55F3

Channel Type:

N

Maximum Continuous Drain Current:

80 A

Maximum Drain Source Voltage:

55 V

Package Type:

DPAK (TO-252)

Series:

STripFET F3

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

8.5 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

110 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

33.5 nC @ 10 V

Width:

6.2mm

Length:

6.6mm

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

2.4mm