Deliver to United Kingdom

Oops! We're currently experiencing technical difficulties with our checkout process. For assistance, please contact support at info@enrgtechglobal.com.

ipb200n25n3gatma1 N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB200N25N3GATMA1
ipb200n25n3gatma1 N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB200N25N3GATMA1
ipb200n25n3gatma1 N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB200N25N3GATMA1
ipb200n25n3gatma1 N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB200N25N3GATMA1
Infineon OptiMOS™ 3 Series MOSFET, 64A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPB200N25N3GATMA1 This N-channel MOSFET is designed for efficient power management in various electronic applications, featuring a maximum continuous drain current of 64A and a voltage rating of 250V. Its robust thermal performance and low on-resistance contribute to effective electrical performance across a wide temperature range, making it suitable for high-frequency switching and synchronous rectification. Features & Benefits • Optimal gate charge x RDS(on) product enhances efficiency
• Low on-resistance minimises power loss during operation
• Operational temperature up to +175°C accommodates diverse applications
• Complies with RoHS and halogen-free standards for eco-friendly use
• Compact D2PAK design and surface mount facilitate integration
• Qualified according to JEDEC for reliability in target applications Applications • Used in power supplies for automation systems
• Appropriate for high-efficiency converters in renewable energy
• Employed in motor control for industrial machinery
• Ideal for synchronous rectification in desktop power supplies
• Applied in electric vehicles for effective energy management What measures should be taken to ensure optimal performance during installation? It is important to maintain an effective thermal management system to dissipate heat, ensuring the device operates within its specified temperature limits. Can this component be used in applications requiring rapid switching? Yes, it is suitable for high-frequency applications such as DC-DC converters and drivers due to its fast switching capabilities. Is there a specific circuit design recommended for optimal use? A proper gate driver circuit can enhance performance, particularly in terms of turn-on and turn-off times, which helps reduce switching losses. What should be considered regarding environmental conditions during operation? Ensure it is placed in an environment where temperatures remain within its operational limits of -55°C to +175°C to prevent thermal degradation.
Infineon

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK IPB200N25N3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB200N25N3GATMA1
Enrgtech Part No:
ET16793141
Warranty:
Manufacturer
£ 2.18

Checking for live stock

Channel Type:

N

Maximum Continuous Drain Current:

64 A

Maximum Drain Source Voltage:

250 V

Package Type:

D2PAK (TO-263)

Series:

OptiMOS™ 3

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

20 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

300 W

Related products