N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 FP IPA60R199CPXKSA1

Channel Type:

N

Maximum Continuous Drain Current:

16 A

Maximum Drain Source Voltage:

650 V

Series:

CoolMOS CP

Package Type:

TO-220 FP

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

199 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Minimum Gate Threshold Voltage:

2.5V

Maximum Power Dissipation:

34 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Transistor Material:

Si

Number of Elements per Chip:

1

Maximum Operating Temperature:

+150 °C

Length:

10.65mm

Typical Gate Charge @ Vgs:

32 nC @ 10 V

Width:

4.85mm

Forward Diode Voltage:

1.2V

Height:

16.15mm

Minimum Operating Temperature:

-55 °C