N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1

Channel Type:

N

Maximum Continuous Drain Current:

30 A

Maximum Drain Source Voltage:

100 V

Series:

OptiMOS™-T

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

42 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.4V

Minimum Gate Threshold Voltage:

1.2V

Maximum Power Dissipation:

57 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

24 nC @ 10 V

Length:

6.5mm

Width:

6.22mm

Transistor Material:

Si

Height:

2.3mm

Minimum Operating Temperature:

-55 °C