The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
TrenchFET Gen IV power MOSFET
Fully lead (Pb)-free device
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
50 % smaller footprint than D2PAK (TO-263)
100 % Rg and UIS tested
Fully lead (Pb)-free device
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
50 % smaller footprint than D2PAK (TO-263)
100 % Rg and UIS tested
N-Channel MOSFET, 299 A, 80 V, 4-Pin PowerPAK 8 x 8L SIJH800E-T1-GE3
Manufacturer:
Vishay
Manufacturer Part No:
SIJH800E-T1-GE3
Enrgtech Part No:
ET21641739
Warranty:
Manufacturer
£ 1.54
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
299 A
Maximum Drain Source Voltage:
80 V
Series:
N-Channel 80-V
Package Type:
PowerPAK 8 x 8L
Mounting Type:
Surface Mount
Pin Count:
4
Maximum Drain Source Resistance:
0.0018 Ω
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
