From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.
Suitable for thermally demanding environments due to 175°C rating Focus MOSFET applications Electric Power Steering Engine management Integrated starter generator Transmission Control Automotive Lighting Braking (ABS) Climate control
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed for use in automotive critical applications.
low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids
N-Channel MOSFET, 184 A, 55 V, 4-Pin LFPAK, SOT-669 BUK9Y19-55B,115
Manufacturer:
Nexperia
Manufacturer Part No:
BUK9Y19-55B,115
Enrgtech Part No:
ET10865607
Warranty:
Manufacturer
£ 0.34
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
184 A
Maximum Drain Source Voltage:
55 V
Package Type:
LFPAK, SOT-669
Series:
BUK9Y19
Mounting Type:
Surface Mount
Pin Count:
4
Maximum Drain Source Resistance:
40 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.3V
Minimum Gate Threshold Voltage:
0.5V
Maximum Power Dissipation:
85 W
